| 摘要 |
PURPOSE:To increase a surface area by providing recessed and protruding surface to the plane perpendicular to a substrate of the lower electrode of a capacitor in order to further increase an electrostatic capacitance value of the capacitor. CONSTITUTION:A silicon oxide film 61 having a recessed and protruding surface is provided, via a thermal oxide film 60, using irregular growth by the normal pressure CVD method of TEOS-O3 on a second polycrystalline silicon film 15c forming a lower electrode of a capacitor. This silicon oxide film 61 is partly etched to form silicon oxide films like the spots on the surface of the second polycrystalline silicon film 15c. Thereafter, the second polycrystalline silicon film 15c is etched using such silicon oxide films as the mask. |
