| 摘要 |
PURPOSE:To obtain a semiconductor device provided with a capacitor having a sufficiently high capacitance by constituting a dielectric substance to be used for constituting the capacitor of a titanium oxide film having a crystal structure oriented in c-axis. CONSTITUTION:A capacitor is formed of a TiO2 film 3 oriented in c-axis on an SiO2 film 2 formed on the surface of a silicon wafer 1 between a pair of phosphor-diffused polysilicon electrodes 4. The TiO2 film 3 is formed on the wafer 1 by using an oxygen ion beam having extremely low energy of <=200eV and a titanium vapor-depositing technique. Therefore, a semiconductor memory can be manufactured through a simple manufacturing process, because a dielectric thin film having a high specific inductive capacity can be obtained and a large capacitance can be secured with a small area. |
