| 摘要 |
PURPOSE:To constitute a thin film of a composite thin film so as to improve a dielectric property as well as dielectric strength by adopting Ta2O5 as a main component and containing therein one kind selected among Y2O3, WO3, and Nb2O5. CONSTITUTION:As it is assumed that the cause of dielectric breakdown of Ta2O5 thin film is due to a defect within the film, and a defect of an oxygen atom, existence of a micro crack caused by a film stress and the like are considered, various kinds of third elements, effective to annihilate each type of defect in micro and macro levels, are selected and added to Ta2O5 to form an oxide film so as to eliminated dielectric breakdown being electron conduction. That is, one kind selected among Y2O3, WO3 and Nb2O5, is added to Ta2O5 to form a composite film to improve dielectric strength and suppress lowering of a dielectric constant. In detail, the dielectric thin film 2 is deposited on an Si substrate 1, and an aluminum dot electrode 4 in a specified form is provided on it, and an aluminum ohmic electrode 3 is formed on the reverse side of the substrate 1, and the dielectric constant and breakdown electric field strength are evaluated based on I-V, C-V characteristics obtained between those electrodes. |
