| 摘要 |
PURPOSE:To provide the hysteresis by raising the transition voltage of the CMOS inverter when the input voltage rises, and reducing the transition voltage when the input voltage lowers. CONSTITUTION:When the voltage of the input part 11 rises gradually, and the voltage of the part of 21 is higher than the transition voltage V21 of the inverter (consisting of MOSFET's15, 19), the transistors 14, 20 conduct, the source voltage of the transistor 13 rises, and therefore the part of 21 attains to the voltage V21. And an output of said inverter transits and the output 12 abruptly increases to VDD. Also, in case when the voltage of the input part 11 decreases gradually, the transistors 16, 17 conduct, and the hysteresis characteristic can be obtained by executing the same operation. When the voltage of the input part 11 is in proximity of VDD or GND, p channel or n channel MOSFET is cut off, and therefore the power consumption can be reduced. |
