发明名称 |
Device and substrate orientation for defect reduction and transistor length and width increase |
摘要 |
Methods of forming a semiconductor substrate and a device oriented substantially along a crystal direction other than a crystal direction that falls along a cleavage plane and the substrate and device formed by each method are disclosed. An ingot of monocrystalline material is formed and marked to denote a crystal direction other than a crystal direction that falls along a cleavage plane. The ingot is lapped to form a semiconductor substrate having a mark denoting a crystal direction other than a crystal direction that falls along a cleavage plane. A device is formed on the semiconductor substrate having a monocrystalline layer, such that a field oxide-active area edge or a gate electrode lies substantially along a crystal direction other than a crystal direction that falls along a cleavage plane. The present invention may be used on any device where dislocation defects, a lateral diffusion, or a lateral oxidation is to be minimized.
|
申请公布号 |
US5171703(A) |
申请公布日期 |
1992.12.15 |
申请号 |
US19910749210 |
申请日期 |
1991.08.23 |
申请人 |
INTEL CORPORATION |
发明人 |
LIN, YI-CHING;DUN, HAIPING;GIRIDHAR, RAGUPATHY V. |
分类号 |
H01L21/02;H01L21/304;H01L29/04 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|