HIGH PURITY METALLIC MATERIAL, MANUFACTURE THEREOF, SPUTTERING TARGET USING SAME, AND WIRING NETWORK AND SEMICONDUCTIVE PACKAGE FORMED BY USING SAME,申请号JP19910018949-传众专利搜索

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发明名称	HIGH PURITY METALLIC MATERIAL, MANUFACTURE THEREOF, SPUTTERING TARGET USING SAME, AND WIRING NETWORK AND SEMICONDUCTIVE PACKAGE FORMED BY USING SAME
摘要
申请公布号	JPH04358030(A)	申请公布日期	1992.12.11
申请号	JP19910018949	申请日期	1991.02.12
申请人	TOSHIBA CORP	发明人	ISHIGAMI TAKASHI;KAWAI MITSUO;OBATA MINORU;SATO MICHIO;YAMANOBE TAKASHI;MAKI TOSHIHIRO;ANDO SHIGERU;YAGI NORIAKI
分类号	C22B34/12;C22C1/00;C22C1/02;C22C14/00;C23C14/34	主分类号	C22B34/12
代理机构		代理人
主权项
地址

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