| 摘要 |
PURPOSE:To provide a semiconductor device which can cope with an increase in an area and a high integration. CONSTITUTION:A base made of a semiconductor column 1 or a semiconductor cylinder 2, and a semiconductor device having an integrated circuit 3 formed on the side face of the base, are provided. Further, the base made of the column 1 or the cylinder 2, an integrated circuit 3 formed on the side face of the base, and a semiconductor device having a coil 4 formed on the side around a central axis of a substrate and connected to the circuit 3, are provided. And, an electron beam resist film is formed on the side face of the base. When the film is irradiated with an electron beam to be pattern-exposed, scanning of the beam in parallel with the central axis of the base and rotating of the base around the central axis, are assembled to select a position, and the film is exposed. |
