| 摘要 |
PURPOSE:To realize a method for manufacturing a mask ROM, which can improve yield, and improve mass the productivity in a multikind low-production. CONSTITUTION:Al wirings are formed on an Si wafer (S5), and then characteristic values such as a contact resistance value, a wiring resistance value, etc., of the wafer and characteristic values such as a driving current, a threshold value voltage, a breakdown voltage, etc., of a MOS transistor are measured by a measuring unit having a TEG (S6). Then, the wafers which have similar measured data, are divided into groups by a data processor based on the measured data of the measured wafers (S9). Subsequently, B ions corresponding to client data are implanted to the respective grouped wafers to write data in memory cells (S10, S13). |
