Removal of far-Uv hardenable resist process - comprising plasma oxidising resist and removing with microwave irradiation at rate determined by oxygen@ pressure and microwave intensity

摘要

The regions of the Si wafer (11) to be injected with a heavy dose of ions are covered selectively with far-ultraviolet-hardenable resist to a max. thickness of 5 microns. During hardening the temp. linearly raised from 120 to 200 deg.C.. After injection of e.g. 10 to the power 15 ions/sq.cm., the resist is plasma-oxidised and removed by microwave irradiation in a chamber (13a) at a rate determined by the O2 pressure and the intensity of the microwaves. ADVANTAGE - Efficient mfr. of reliable semiconductor components is guaranteed without use of H2 or high-frequency electric field.