| 摘要 |
PURPOSE:To precisely control the electric field distribution in an (i) layer so as to prevent a decline in film quality of the (i) layer by forming p- or n-type dopant layers having thicknesses several atoms in the (i) layer. CONSTITUTION:Impurity atoms, such as P, B, Ga, As, Sb, etc., are locally introduced into an (i) layer film to thicknesses of several atoms, preferably, one or two atoms only and the number of a dopant is controlled to <=1X10<13> pieces/cm<3>. For instance, a glass substrate 1 is put on an earthed substrate provided with facing electrodes in a reaction chamber and a p-layer 3 is form on an SiO2 film 2. Then the first (i) layer 4a is formed to a thickness of 2,000Angstrom by introducing SiH4 into the reaction chamber. After forming the layer 4a, the first sheet-like layer B 5a containing boron is formed by introducing SiH4 and B2H6 diluted with hydrogen into the chamber. Then, after the second (i) layer 4b having a thickness of 2,000Angstrom and second sheet-like layer 5b containing baron are successively formed, the third (i) layer 4c having a thickness of 2,O00Angstrom is formed so that the (i) layer 4 can have an overall thickness of 6,000Angstrom . Therefore, the charge distribution in the (i) layer can be rationalized without changing the film quality of the (i) layer. |
