PROCEDEU DE PREPARARE A UNUI STRAT DE PASIVARE CU REZOLUTIE INALTA

摘要

Passivation layer for a semiconductor device is prepd. according to a predetermined configuration by depositing on a substrate a layer contg. a glass and a photoresist, exposing parts of this layer to a luminous source and developing the exposed layer under ultrasonic vibration. The time of contact between the developer and the glass/photoresist layer can be reduced to 1 min. avoiding expansion and undercutting of the polymer at the edge of the pattern, by using the ultrasonic vibration.