| 摘要 |
PURPOSE:To allow the formation of fine patterns on the surface of a semiconductor element by incorporating a polymer which is obtd. by subjecting monomers to living anion polymn. and has 1 to 1.4 mol.wt. distribution as an essential component into the resist material. CONSTITUTION:This resist material contains the polymer which is obtd. by subjecting the monomers expressed by formula I to the living anion polymn. and has 1 to 1.4 mol.wt. distribution as the essential component. In the formula I, R<1> to R<5> respectively denote a hydrogen atom or 1 to 12C alkyl group; R<6> denotes a hydrogen atom or methyl group. The living polymers can be made to exist in the narrow range of 1 to 1.4 mol.wt. distribution and can be controlled to an arbitrary mol.wt. distribution as well. The polymer having such narrow range of the mol.wt. is used as the essential component of the resist material, by which the sufficient exposing sensitivity even to far UV light is obtd. and the degradation in the light intensity is lessened. In addition, the drop of the vacuum degree in a vacuum stage, the induction of the contamination of the process atmosphere and the delay in the dissolution rate of the polymers are eliminated. Incidentally, the GPC elution curve of this polymer is as shown in Fig. and the mol.wt. distribution is 1.20. |
