MANUFACTURE OF CAPACITOR USED FOR MEMORY CELL OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF

摘要

PURPOSE: To provide manufacture for a capacitor for forming a pattern through the use of a sacrifice layer without the worry of deformation or contamination at a high temperature and a capacitor with plural recessed faces for increasing capacity. CONSTITUTION: A first recessed face 68 part being a storage electrode 72 is constituted of a first sacrifice layer consisting of an oxide film and then a second sacrifice layer consisting of an oxide film is formed from within the first recessed face part. After then, a conductive layer is formed on the top face of these to form a storage electrode 72 with plural recessed faces 64, 66, 68 and 70.