| 摘要 |
PURPOSE:To prevent a capacity from being lowered when a capacitor dielectric layer is made thin. CONSTITUTION:When a dielectric layer 11 composed of a double layer by a nitride film 11a and by an oxide film 11b obtained by oxidizing the nitride film 11a is formed, the nitride film 11a is deposited on a nitride film 16 in parts other than a storage node and the film thickness of the nitride film 11a is made uniform. Alternatively, when the nitride film is oxidized, a nitride film is formed in a part from which the nitride film disappears. Thereby, even when the dielectric layer is made thin, it is possible to prevent the oxide film from creeping to the storage node and to prevent a capacity from being lowered. |
