INSULATING GATE TYPE BIPOLAR TRANSISTOR,申请号JP19910116317-传众专利搜索

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发明名称	INSULATING GATE TYPE BIPOLAR TRANSISTOR
摘要
申请公布号	JPH04343475(A)	申请公布日期	1992.11.30
申请号	JP19910116317	申请日期	1991.05.21
申请人	NIPPONDENSO CO LTD	发明人	YAMAMOTO MASAHIRO;KATO NAOTO
分类号	H01L29/78;H01L29/739	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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