| 摘要 |
<p>PURPOSE:To provide a manufacturing method of an electric field electron emitting device wherein a tip radius of curvature of an emitting projection is further decreased, a distance between a cathode electrode and a gate electrode is further shortened, and threshold voltage is reduced. CONSTITUTION:A cathode electrode layer 5 is etching processed by using an etching mask 8 having a sharp emitting projection shape made by an excess etching method so as to form a cathode electrode 9 having an emitting projection 11 whose tip radius of curvature is small. After the cathode electrode 9 is formed, a gate electrode 2, which is self-matched with the cathode electrode 9, is formed by means of a directional particle deposition method so that an electric field electron emitting device having small parasitic capacity and small threshold value voltage can be manufactured.</p> |
