| 摘要 |
PURPOSE:To materialize a short circuit protective circuit suitable for a quick- response and high-performance switching element. CONSTITUTION:The middle between the drain and the source of a MOSFET 101 is connected to the main electrode which becomes time basis of the gate control of a semiconductor switch element 3, and a switching control signal is given between the gate of the semiconductor switching element 3 and the source of the MOSFET 101, and overcurrent control voltage is given between the gate and the source of the MOSFET 101. |
