发明名称 METHOD OF FORMING METALLIC ELECTRODE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: To improve the step coverage of a metallic electrode formed on a substrate and an insulating layer, formed on the metallic electrode. CONSTITUTION: A process for pattern-forming a first metallic laser 11 constituted of a material, which is not anode-oxidized on the substrate in prescribed first thickness and a process for forming a second metallic layer constituted of a material which can be anode-oxidized, are provided. A process for forming a resist 13, corresponding to the first metallic layer 11 which is patterned and anode-oxidizing an area from which the first and second metallic patterns are removed in the same level as the surface of the substrate with the resist as a mask, so as to form a flat face is contained.</p>
申请公布号 JPH04338677(A) 申请公布日期 1992.11.25
申请号 JP19920035801 申请日期 1992.01.28
申请人 SAMSUNG ELECTRON CO LTD 发明人 HAI JIYOUSEI;SON SEIKA;CHIYOU JINSHIYOKU;KIN SOUSHIYU;KIN NANTOKU;KIN RIYOUTAKU
分类号 H01L29/40;H01L21/28;H01L21/283;H01L21/316;H01L21/3205;H01L21/336;H01L21/60;H01L21/768;H01L29/49;H01L29/78;H01L29/786 主分类号 H01L29/40
代理机构 代理人
主权项
地址