| 摘要 |
PURPOSE:To provide a semiconductor memory device where ground noises are suppressed at the output of data. CONSTITUTION:When activated control signals 101 are inputted through a terminal, N channel MOS transistors 2 and 3 are successively activated, the potential of a nodal point C is equal to a potential, VSS- 2VT, and a substrate potential VBB, where VSS is a ground potential and VBB=VSS- 2VT. When a ground potential Vss is increased to a potential, VSS+VT, the potentials of nodal points A, B, and C become VSS+VT, VSS and VSS-VT respectively, and the gate potential of an N channel MOS transistor 4 is represented by a potential, VSS- VT, which exceeds a substrate potential VBB supplied from a terminal 53, so that the N channel MOS transistor 4 is activated to enable a current to flow through a grounding point to a substrate, whereby a grounding point can be restrained from increasing in potential. |
