Integrated power semiconductor switch - has buried oxide layer insulating lateral MOSFET source from substrate and epitaxial layer

摘要

The integrated switch comprises a lateral thyristor (2), controlled by a lateral MOSFET (3) having its drain/source path (11,12,13) in series with the cathode/anode path (4,5,6,7) of the thyristor (2). A buried oxide layer (8) is used for insulating the source (13) of the lateral MOSFET (3) from the substrate (7) and the epitaxial layer (6). Pref. the buried oxide layer (8) encloses the lateral MOSFET (3), which has its drain (10) coupled to the cathode (4) of the thyristor (2) and its source (13) coupled to the anode (7) of the latter. USE - For voltages in range between 500V and 1500V.