| 摘要 |
PURPOSE:To prevent a phenomenon of an adhesion of an acicular substance mainly composed of silicon oxide by a method wherein a silicon component in a vapor phase is removed in an air flow path between an ion generation means and an air force-feed means in a recording head, and the silicon-free air is passed to a discharge wire of the ion generation means in the recording head. CONSTITUTION:Dust and the like in air forcibly fed out of a blower 10 are removed through a dust and ammonia removal filter 11, thereafter being led into a dummy ion generation part 50. Since a dummy discharge wire 52 generates a corona discharge in all the area of a cylindrical chamber 51 in a circumferential direction, a plazma generation area in the vicinity of the dummy discharge wire 52 is increased. Silicon in the air is efficiently caught by the plasma area when passing through the cylindrical chamber 51. |
