发明名称 X-RAY TRANSMISSION FILM FOR X-RAY LITHOGRAPHY MASK
摘要 PURPOSE:To provide an inorganic film which is useful as an X-ray transmission film for X-ray lithography mask since it has a superb surface smoothness, a high visible light transmission, and a high resistance to SOR since to distortion is generated even if a high-energy beam is applied. CONSTITUTION:An X-ray transmission film for X-ray lithography mask consists of an inorganic thin film as a main material which is shown by an expression SiCxNy consisting of three elements of silicon, carbon, and nitrogen which are obtained from one or more types of compounds where silicon, carbon, or nitrogen is contained by the chemical vapor deposition method.
申请公布号 JPH04332115(A) 申请公布日期 1992.11.19
申请号 JP19910130498 申请日期 1991.05.02
申请人 SHIN ETSU CHEM CO LTD 发明人 KASHIDA SHU;NAGATA AKIHIKO;NOGUCHI HITOSHI
分类号 C23C16/01;C23C16/36;G03F1/22;H01L21/027 主分类号 C23C16/01
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