| 摘要 |
PURPOSE:To provide a method for forming a pattern, which can improve a sectional shape of the pattern to be formed by reducing influence of scattering of etching gas particles for forming the pattern in a groove or an opening of a part to be removed by etching in the method using a multilayer resist method. CONSTITUTION:A step of sequentially forming first - fourth etching resistant films 11-14 and a photosensitive film 15 on an element 10 to be patterned, and a step of forming first patterns 15a-15c of the film 15, are included. Then, steps of sequentially transferring the patterns 15a-15c to fourth - first etching resistant films 14-11 of lower layers by etching, and eventually etching a third pattern 13a and the film 11 to form fifth patterns 11a-11c of the film 11 under fourth patterns 12a-12c of the film 12, are included. |
