SRAM with high integration density - comprising diffusion section on substrate, electrodes and insulating sections

摘要

A SRAM (Static Random Access Memory) comprises: (a) a substrate (1) of a conductance type having on its surface an interference-diffusion section (2) of a second conductance type (b) a pair of layers (3,3a) of the first conductance type, each layer having a diffusion section (4, 4a) of second conductance type of predetermined width and thickness; (c) a pair of second layers (5,5a) of second conductance type, each layer having a diffusion section (6,6a) of second conductance type of predetermined width and thickness; (d) an earth electrode (7) (e) a pair of first electrodes (8,8a) (f) a pair of second electrodes (9,9a) (g) a pair of first insulation section (10,10a) (h) a pair of second insulating sections (11, 11a) (i) a pair of charging resistances (13, 13a) and (j) a pair of third insulating sections. Prodn. of the SRAM is also claimed. USE/ADVANTAGE - The SRAM can be a static storage with selective writing and reading access. It has a high integration density.