| 摘要 |
PURPOSE:To improve the yield of the manufacture of a DRAM having a stack- type capacitor element for information storage use, which is constituted of a lower electrode consisting of a polycrystalline silicon film, an insulating film consisting of a tantalum oxide film and an upper electrode consisting of a high-melting point metal film, and to improve the reliability of the DRAM. CONSTITUTION:A tantalum oxide film 14 is deposited on a lower electrode 12a consisting of a polycrystalline silicon film, then, a tungsten film 15 is deposited on the above film 14 using a CVD method, then, a heat treatment a semiconductor substrate 1 is performed using the mixed gas of hydrogen gas and vapor with the condition that silicon and tantalum are oxidized, but tungsten is not oxidized. |
