发明名称 |
TRANSMISSION TYPE PHOTOELECTRIC SURFACE AND ITS MANUFACTURE |
摘要 |
<p>PURPOSE:To improve a transmission type photoelectric surface used in an image tube. CONSTITUTION:The interface between a window layer and a reflection preventive film has a very good optical characteristic, because very thin layers 8 and 41 are interposed between the window layer 4 of a group III-V compound semiconductor including Al and the reflection perventive film 5, and the layers 8 and 41 are made a group III-V compond semiconductor excluding Al or an Al oxide film in which oxygen is firmly bonded to Al. Moreover a wavelike pattern inherent in a liquid phase growth method can be eliminated by using a gaseous phase growth method in the manufacturing process of a transmission type photoelectric surface.</p> |
申请公布号 |
JPH04324227(A) |
申请公布日期 |
1992.11.13 |
申请号 |
JP19910092229 |
申请日期 |
1991.04.23 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
FUTAHASHI TOKUAKI;ARAGAKI MINORU;NAGAI TOSHIMITSU;KIBUNE ATSUSHI;OTA MASASHI |
分类号 |
H01J9/233;H01J1/34;H01J29/38 |
主分类号 |
H01J9/233 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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