发明名称 TRANSMISSION TYPE PHOTOELECTRIC SURFACE AND ITS MANUFACTURE
摘要 <p>PURPOSE:To improve a transmission type photoelectric surface used in an image tube. CONSTITUTION:The interface between a window layer and a reflection preventive film has a very good optical characteristic, because very thin layers 8 and 41 are interposed between the window layer 4 of a group III-V compound semiconductor including Al and the reflection perventive film 5, and the layers 8 and 41 are made a group III-V compond semiconductor excluding Al or an Al oxide film in which oxygen is firmly bonded to Al. Moreover a wavelike pattern inherent in a liquid phase growth method can be eliminated by using a gaseous phase growth method in the manufacturing process of a transmission type photoelectric surface.</p>
申请公布号 JPH04324227(A) 申请公布日期 1992.11.13
申请号 JP19910092229 申请日期 1991.04.23
申请人 HAMAMATSU PHOTONICS KK 发明人 FUTAHASHI TOKUAKI;ARAGAKI MINORU;NAGAI TOSHIMITSU;KIBUNE ATSUSHI;OTA MASASHI
分类号 H01J9/233;H01J1/34;H01J29/38 主分类号 H01J9/233
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