| 摘要 |
PURPOSE:To manufacture the wiring making excellent migration resistance giving high yield as for the title wiring for semiconductor circuit device. CONSTITUTION:Within the title wiring comprising crystalline material to be connected to a semiconductor element, the crystal axial direction of the nearest atoms arranged in the single crystals 30, 31, 32, 33 comprising the crystalline material and the direction 40 of the current fed to the wiring are intersected with each other within the angle range not exceeding 22.5 deg.. |
