| 摘要 |
PURPOSE:To prevent malfunctions by forming of a memory transistor, a read bit line, a resistor connected between the bit line and a word line and a write bit line. CONSTITUTION:A power source voltage in which a potential difference between a drain 11 and a source 12 connected through a resistor 21 and a write bit line 16 to a terminal 20 becomes a drain withstand voltage or higher of a memory transistor 10, is supplied to the terminal 20, and a breakdown current flows between the drain 11 and the source 12 of the transistor 10. As a result, the drain 11, a gate 13 and the source 12 are electrically short-circuited thereamong thereby to write information. When a potential of a word line 17 is set to the power source voltage, a leakage current flows from the transistor 10 of a writing state to the source 12 through the gate 13, the potential is dropped via a resistor 18, a potential lower than 1/2 of the power source voltage is output from a read bit line 15 to read information. Thus, erroneous writing and erroneous reading can be prevented. |
