| 摘要 |
<p>PURPOSE:To provide an active device with small element capacity. CONSTITUTION:On an insulative base board 1 a No.1 electrode 2 is provided, whereover No.1 ferro-dielectric layer 3 consisting of copolymeride of VDF and TrFE in the same form as the No.1 electrode 2 is formed, and thereover a No.2 ferro-dielectric layer 4 consisting of copolymeride of VDF and TrFE is formed, and further thereover a No.2 electrode 5 is formed, and thus an active device is produced. Because the active layer of this active device is No.2 ferro-dielectric laye 4 formed at the edges of the No.1 electrode 2, the area is small and the capacity is also small. The No.1 ferro-dielectric layers 3 is heated and rapidly cooled to lessen the ferro-dielectric property, while the No.2 ferro-dielectric substance layer 4 is heated and gradually cooled to enlarge the ferro-dielectric property.</p> |
