| 摘要 |
PURPOSE:To obtain a semiconductor thin film with a crystallizability in an extremely thin-film state for improving performance of an amorphous solar cell. CONSTITUTION:A process for allowing a thin film to be grown while emitting ion onto a growth surface and that for performing only irradiation of ion are repeated and then a title item is a crystallizability semiconductor thin film where a thickness of the thin film which is formed by each repetition is 1 to 100Angstrom and an entire film thickness is 300Angstrom or less, thus enabling a crystallizability semiconductor thin film with a film thickness of 300Angstrom or less which could not be produced by conventional technologies to be formed. Photoelectric conversion efficiency can be improved by applying this thin film to a conductive thin film of an amorphous solar cell. |
