| 摘要 |
<p>PURPOSE: To make reliable resistive contact by connecting a thin-film conductive layer and a metal wire directly by employing a contact structure, which has a thick conductive layer below the thin-film conductive layer and connects the two conductive layers. CONSTITUTION: A thick insulating film 20 is formed on the surface of a semiconductor substrate 10 which is electrically insulated. A think conductive layer 50 which is patterned is formed on the entire surface of the insulating film, and a 1st inter-layer insulating film 40 which is partially removed on the thick conductive layer is formed as a vertical-wall shape in an area, where the 1st inter-layer insulating layer is partial removed. The contact structure for the semiconductor device which consists of thin-film conductive layers 30 and 30a patterned in fixed shape on other parts on the 1st inter-layer insulating layer, a patterned thin-film conductive layer 30, and a 2nd inter-layer insulating layer 42 formed on the 1st inter-layer insulating layer that is left without being removed, can be secured to a wide connection area by the thin-film conductive layer 30a which is formed in the vertical-wall shape, so that a reliable resistive contact can be made.</p> |
