| 摘要 |
<p>PURPOSE:To obtain a liquid crystal surface device which enables a high-speed switching to be made by forming a micro crystal silicon layer (muC-Si) on a plastic substrate. CONSTITUTION:A gate electrode 2 is formed on a plastic film substrate 1, a gate insulation film 3 is formed, and then an undoped muC-Si 4 is formed. Then, n(+)-muC-Si 5 for ohmic contact is formed continuously and is machined to a specific shape. thus enabling a muC-Si layer 6 to be formed. Therefore, a film of a TFT(thin film transistor) can be formed at a low temperature, the obtained muC-Si film has no photocon property, it shows a high conductivity and a high mobility and is suited for a high-speed drive, and further a threshold value can be controlled by activation according to ion-implantation + excimer laser at the time of its manufacture. Also, a liquid crystal display device with the TFT achieves a high-speed switching.</p> |
