| 摘要 |
<p>PURPOSE:To remove convensional troubles by shortening time and reducing labor for the inspection of a flaw on a liquid crystal thin film transistor(TR) and preventing the pollution of a TFT substrate in the case of inspecting a TFT element by direct contact. CONSTITUTION:The charge-up phenomenon of an insulating part by the observation of a scanning type electromicroscope (SEM) is utilized. The TFT substrate 1 is fixed on an SEM sample board in their insulating state. All gate wires 2 and source wires 3 are individually short-circuited through conductive tapes 4, 7 and then grounded by earth wires 6, 9 through switches 5, 8. In the case of inspecting the flaw of the gate wires, only the gate wires are grounded and observed by the SEM. Since a disconnected part becomes an insulating state, charge-up is generated and the disconnecting state appears on an SEM image as potential contrast. Thereby the wire flaw of the TFT can be detected.</p> |
