| 摘要 |
PURPOSE:To offer a semiconductor laser with which the discontinuity of the bands of an active layer and clad layers is increased and the improvement of the temperature characteristics of the laser can be contrived. CONSTITUTION:In a semiconductor laser of a constitution wherein an n-type InGaAlP clad layer 12, an InGaP active layer 13 and a p-type InGaAlP clad layer 14 are grown in order on an n-type GaAs substrate 10 to from a double heterostructure part, a superlattice structure with a regularity in the orientation <111> is formed in the layer 13 of the double heterostructure part and a superlattice structure is not formed in the layer 14.
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