Method and apparatus for the production of an extremely thin film layer of single crystalline silicon in a SOI substrate by an etching method controlled by interferometry.

摘要

A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase etching excited by the ultraviolet light, effecting the measur ement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the chemical vapor-phase etching reaction vessel or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel, are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.