| 摘要 |
PURPOSE:To reduce irregularity of characteristics by element or by product and to provide them with uniform photoelectric conversion characteristics and a high Schottky barrier by a method wherein a transparent conductive film is formed and heat-treated in stages or with temperature increased gradually. CONSTITUTION:Individual electrodes 21 and a common electrode 31 are formed on an insulating substrate 11 through evaporation. A photoelectric conversion film 41 is formed so as to cover the picture element section 25 of the individual electrode 21. Then, an I.T.O. film is formed through a sputtering method and heat-treated at a temperature of 120 deg.C in an atmosphere of nitrogen. The I.T.O. film is patterned into a transparent conductive film 51, which is heat-treated again at a temperature of 225 deg.C in an atmosphere of nitrogen. Therefore, an element is prevented from rising quickly in temperature, and the photoelectric conversion film 41 can be gradually and uniformly decreased in lattice defect. The transparent conductive film 51 grows to be easily controlled in etching rate, and the transparent conductive films 51 of products can be lessened in dispersion of shape. |
