| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor quantum well box whose side is a few to tens of nm long and which is uniform in size and excellent in reproducibility. CONSTITUTION:An AlGaAs layer 2 is made to grow on a GaAs substrate 1 to serve as a barrier layer. A silicon grid pattern 3 is formed thereon. Gold ultramicro-particles whose side is tens of nm long are orderly formed conforming the grid pattern 3. The pattern is removed, an AlGaAs 5 is selectively formed in a gap between the gold ultramicro-particles 4. The gold ultramicro-particles 4 are removed, and GaAs is selectively grown in holes regularly arranged to serve as a well layer. An AlGaAs layer serving as a barrier layer is formed on all the surface. The above processes are repeatedly carried, whereby GaAs quantum well boxes are formed. By this setup, semiconductor quantum well boxes regularly arranged in three dimensions can be manufactured excellent in reproducibility. |
