| 摘要 |
<p>PURPOSE:To form a source region and drain region in a self-alignment manner to a gate electrode at a temperature, where a glass substrate can be used, by activating impurities ion-implanted to the gate electrode in the self-alignment manner while penetrating a gate insulating film by laser beams. CONSTITUTION:An SiO2 film 102 is formed onto an insulating substrate 101, and a source region and a drain region are formed by silicon layer containing impurities. A silicon layer 105 in an active region in film thickness of 70nm or less is applied, and patterned. The silicon layer 105 is irradiated with a laser beam 106, and a polycrystalline silicon layer 107 is formed. A gate insulating film 108 is formed, a gate electrode 109 is formed, and the ions of impurities are implanted to the silicon layer 105 in a self-alignment manner to the gate electrode 109. Impurities are activated by a laser beam 113.</p> |
