发明名称 |
PHOTOELECTRIC SURFACE, METHOD OF MAKING SAME, AND PHOTOELECTRIC CONVERSION TUBE USING SAME PHOTOELECTRIC SURFACE |
摘要 |
<p>PURPOSE:To form a photoelectric surface wherein the S/N ratio of emitted electrons for incident light is improved without lowering the electron emission efficiency in the effective region and cross talks between channels is decreased and to provide a photoelectric conversion tube using the photoelectric surface. CONSTITUTION:A photoelectric surface includes a photoelectric surface portion 2 formed of a group 3-5 compound semiconductor and an oxide layer 7 formed around the photoelectric region. Optically, the photoelectric surface portion 2 of a group 3-5 compound semiconductor is of a galliumarsenic compound semiconductor and the oxide layer contains aluminum with its surface being oxidezed. In the photoelectric surface of the group 3-5 group compound semiconductor the electron emission efficiency is high. An oxide layer 7 is formed around the photoelectric region. Electron emission from the oxide layer 7 is conciderably decreased and the S/N ratio is improved. Also emission of photoelectrons due to the incident light is suppressed and the cross talk is decreased.</p> |
申请公布号 |
JPH04303534(A) |
申请公布日期 |
1992.10.27 |
申请号 |
JP19910089283 |
申请日期 |
1991.03.29 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
FUTAHASHI TOKUAKI |
分类号 |
H01J1/34;H01J9/12;H01J29/38;H01J40/16;H01J43/20 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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