| 摘要 |
PURPOSE:To perform the etching of wafer by a method wherein the standing wave of microwave is made to be generated in an etching chamber, the wafers are placed at the nodal points of wave and etching is performed introducing a gas into the chamber. CONSTITUTION:When the whole length of the etching chamber 12 is made to be the integral times as much as the half wave length of mu wave generating from a magnetron 10, the standing wave is generated easily in the chamber 12, and wave antinodes 22 having a strong electric field and wave nodes 24 having a weak electric field are generated alternately. The wafers 20 are put at the nodes 24, and etching is performed introducing CF4. By this constitution, the wafers are not damaged by the impact of electron, and although the etching speed of wafers is reduced to some extent than the case to put the wafers at the antinodes 22, almost the same grade etching can be performed. |
