| 摘要 |
<p>PURPOSE:To reduce the drop of a liquid crystal driving voltage, in a TFT array surface protecting film. CONSTITUTION:By using a plasma CVD method, a surface protecting film is formed of a tantalum oxide film having high permittivity (20-30). Thereby the voltage drop in the surface protecting film is reduced to 1/4, as compared with the conventional silicon nitride film or silicon oxide film.</p> |
