| 摘要 |
PURPOSE:To maintain one-dimensional confinement of carriers at the time of low current, realize excellent electron conveyance characteristics, and restrain the increase of parasitic source resistance caused by thinning a channel. CONSTITUTION:In an FET structure wherein an undoped channel layer 6 is formed on an electron supply layer 4, a superlattice layer 5 in a surface is formed on the interface between the electron supply layer 4 and the undoped channel layer 6. Said superlattice layer 5 is constituted by alternately arranging rods 5A and rods 5B composed of materials of different electron affinity. Electrons are made to transit in the longitudinal direction of the rods. When a suitable negative voltage is applied to a gate 9, the electron distribution under the gate moves toward the substrate 1 side, and therefore is confined in the superlattice layer 5, so that one-dimensional gas is formed. On the other hand, in a parasitic region of high electron density, electrons distribute in the undoped layer 6 on the gate 9 side, so that the increase of parasitic resistance caused by thinning a channel also can be restrained. |
