发明名称 SCHALTUNGSSUBSTRAT AUS ALUMINIUMNITRID.
摘要 <p>Disclosed is an aluminum nitride circuit substrate comprising an aluminum nitride plate and a conductive material bonded to the aluminum nitride plate through a metallized layer formed on the bonding surface of the aluminum nitride plate, the conductive material being of a metallic material which has a thermal expansion coefficient of 2 x l0<-><6> to 6 x l0<-><6>/ DEG C. The aluminum nitride circuit substrate according to this invention is free from the generation of crack caused by the difference of the thermal expansion coefficients of AlN plate and a conductive material bonded to the AlN plate to improve the reliability of the elements.</p>
申请公布号 DE3781731(D1) 申请公布日期 1992.10.22
申请号 DE19873781731 申请日期 1987.07.10
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 SATO, HIDEKI;MIZUNOYA, NOBUYUKI, KAWASAKI-SHI KANAGAWA-KEN, JP
分类号 H01L23/50;C04B37/02;H01L23/15;H01L23/498;H05K1/02;H05K1/03;H05K1/09;H05K3/00;H05K3/24;(IPC1-7):H01L23/48 主分类号 H01L23/50
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