发明名称 |
Circuits for preventing breakdown of low-voltage device inputs during high voltage antifuse programming. |
摘要 |
<p>A circuit for isolating a first low-voltage circuit node from a second circuit node which carries high programming voltages during programming of user-programmable interconnect elements includes a novel two input NAND gate having one input structure configured from high voltage devices connected to the second circuit node. The other input of the NAND gate is a control input for the isolation device and is connected to a low-voltage logic signal which is high when the signal from the high programming voltage node is to be passed through to the low-voltage node and low when the low-voltage node is to be isolated from the high programming voltage node. The output of the NAND gate is connected to the first low-voltage circuit node. <IMAGE></p> |
申请公布号 |
EP0509632(A2) |
申请公布日期 |
1992.10.21 |
申请号 |
EP19920301724 |
申请日期 |
1992.02.28 |
申请人 |
ACTEL CORPORATION |
发明人 |
GALBRAITH, DOUGLAS C.;GREENE, JONATHAN W. |
分类号 |
H01L21/82;G11C17/18;H01L21/822;H01L27/04;H03K17/10;H03K19/003 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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