摘要 |
PURPOSE: To provide a DRAM having stacked capacitors capacitances of which can be increased, and manufacturing method thereof. CONSTITUTION: For increasing the capacitance of a capacitor, a DRAM cell has stacked capacitors each having a charge storage electrode 11A having a tunnel-like space, capacitor dielectric films 13 on the outer surface of the charge storage electrode and a space inner surface and a plate electrode 14A. |