发明名称 DRAM PROVIDED WITH STACKED CAPACITOR AND MANUFACTURE THEREOF
摘要 PURPOSE: To provide a DRAM having stacked capacitors capacitances of which can be increased, and manufacturing method thereof. CONSTITUTION: For increasing the capacitance of a capacitor, a DRAM cell has stacked capacitors each having a charge storage electrode 11A having a tunnel-like space, capacitor dielectric films 13 on the outer surface of the charge storage electrode and a space inner surface and a plate electrode 14A.
申请公布号 JPH04298074(A) 申请公布日期 1992.10.21
申请号 JP19910280098 申请日期 1991.10.25
申请人 GENDAI DENSHI SANGYO KK 发明人 RI TEIKAN;BOKU TETSUYOSHI
分类号 H01L27/10;H01L21/02;H01L21/8242;H01L27/108 主分类号 H01L27/10
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