| 摘要 |
<p>The present invention provides an EPROM memory cell structure that is utilizable in high speed UV-erasable or flash EPROM contactless arrays and that uses source side injection for programming. The EPROM cell structure comprises spaced-apart source and drain regions (12,14) that define a channel region in a substrate. A first layer of insulating material overlies the channel region. A floating gate (22) is formed on the first insulating layer and overlies a first portion (16) of the channel region that extends from the drain region to a point in the channel region intermediate the source and drain regions thereby defining a second portion of the channel region that extends from the intermediate point to the source region and over which the floating gate does not extend. The floating gate also includes a coupling portion that extends over the field oxide that defines the active area of the EPROM cell. is A second layer of insulating material is formed over the floating gate, including the coupling portion of the floating gate. A polysilicon control gate (32) overlies the floating gate but is separated therefrom by the second insulating layer. The control gate includes an access portion that overlies the second portion of the channel region but is separated therefrom by the first layer of insulating material. A polysilicon coupling line (34) overlies the coupling portion of the floating gate but is separated therefrom by the second insulating layer. This cell structure is utilized in a contactless array that relies on shared source lines, resulting in very small cell size and relatively simple decoding. <IMAGE></p> |
