发明名称 |
Local interconnect method and structure |
摘要 |
An improved local electrical interconnect device fabrication and method are provided. Reacted refractory metal contacts and local interconnect lines (54) and (56) are formed by reacting a deposited refractory metal layer (53) with selectively grown semiconductor regions (48) and (50). Regions (48) and (50) are formed after a masked ion implantation which forms loosely bonded surface regions (44) and (46) within field insulating regions (12). As a result of the ion implantation, semiconductor regions (48a) and (50a) are able to form over field insulating regions (12).
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申请公布号 |
US5156994(A) |
申请公布日期 |
1992.10.20 |
申请号 |
US19900634272 |
申请日期 |
1990.12.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MOSLEHI, MEHRDAD M. |
分类号 |
H01L21/3205;H01L21/336;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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