| 摘要 |
In a reactor at least one of the components of the cpd. semiconductor, pref. a III-V cpd., is transported into the gas-phase, contg. hydrides and chlorides, from an evapn. source. It is then mixed with the other components, transported to the substrate and deposited. In order to vary the deposition rate between 1 and 500 micron/hour the ambient pressure is varied from 80-1 mbar. HCl pressure is pref. varied in the range 5 x 10 power(-6) to 10 power(-3) bar. The elements of Gp. V of the Periodic System are pref. provided as hydrides and their pressure varied in the range 10 power(-4) to 10 power(-2) bar. The substance evapd. is pref. a Gp.III element, pref. Ga, and the source temp. used is pref. 700 deg.C.
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