发明名称 FERROELECTRIC CAPACITOR AND A SEMICONDUCTOR DEVICE HAVING THE SAME
摘要 A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.
申请公布号 US5155573(A) 申请公布日期 1992.10.13
申请号 US19900633324 申请日期 1990.12.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ABE, KAZUHIDE;TOYODA, HIROSHI;YAMAKAWA, KOJI;IMAI, MOTOMASA;HARATA, MITSUO;SAKUI, KOJI
分类号 H01L21/02;H01L21/8246;H01L27/115;H01L29/92 主分类号 H01L21/02
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