发明名称 |
FERROELECTRIC CAPACITOR AND A SEMICONDUCTOR DEVICE HAVING THE SAME |
摘要 |
A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.
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申请公布号 |
US5155573(A) |
申请公布日期 |
1992.10.13 |
申请号 |
US19900633324 |
申请日期 |
1990.12.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ABE, KAZUHIDE;TOYODA, HIROSHI;YAMAKAWA, KOJI;IMAI, MOTOMASA;HARATA, MITSUO;SAKUI, KOJI |
分类号 |
H01L21/02;H01L21/8246;H01L27/115;H01L29/92 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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