| 摘要 |
PURPOSE:To manufacture a semiconductor memory having high level of integration and high operation speed. CONSTITUTION:In order to form a P<+> type diffusion layer 15 as a channel stopper, BF2<+> ions 25 are implanted in a.peripheral circuit part 24 before an Sio2 film 12 as a field oxide film 12 is formed, and B<+> ions 14 are implanted in a memory cell part 22 after the SiO2 film 12 is formed. Hence the BF2<+> ions 25 are not implanted in the vicinity of the surface of an active region 16 in the peripheral circuit part 24, and the B<+> ions 14 are not stretched on the surface of the active region 16 in the vicinity of a bird's beak 12a of the SiO2 film 12. |
